Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition
Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition
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DOI：
10.1063/1.4874609
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发表时间：
2014-04-28
影响因子：
4
通讯作者：
Hosono, Hideo
中科院分区：
文献类型：
--
作者：
Hiramatsu, Hidenori;Sato, Hikaru;Hosono, Hideo
采用脉冲激光沉积法在（La，Sr）（Al，Ta）O3单晶衬底上异质外延生长了掺钴BaFe 2As 2薄膜，研究了不同波长的激光激发和脉冲能量对薄膜生长的影响。利用X射线衍射摇摆曲线的倾斜角和扭曲角，定量分析了各薄膜的结晶度。我们发现最佳沉积速率与激光波长无关，且可以通过脉冲能量进行调节。在最佳脉冲能量下生长的高质量膜（即，最佳沉积速率）表现出高于1 MA/cm（2）的高临界电流密度，而与激光波长无关。(C)2014 AIP Publishing LLC.
We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La, Sr)(Al, Ta)O-3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm(2) irrespective of the laser wavelength. (C) 2014 AIP Publishing LLC.