Direct bonding of LiNbO3 and SiC wafers at room temperature
Direct bonding of LiNbO3 and SiC wafers at room temperature
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DOI：
10.1016/j.scriptamat.2019.08.027
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发表时间：
2020-01-01
影响因子：
6
通讯作者：
Utsumi, Jun
中科院分区：
文献类型：
--
作者：
Takigawa, Ryo;Utsumi, Jun
研究了表面活化键合（SAB）法在LiNbO 3与SiC直接键合中的应用。SAB使用氩快原子束轰击导致在室温下键合的LiNbO 3/SiC晶片的第一次成功形成。横截面透射电子显微镜（TEM）观察表明，在原子水平上的无空隙的键合界面。键合界面具有几纳米厚的非晶状层，这被认为是在轰击过程中形成的。所得到的LiNbO 3/SiC结构可以用于实现包括用于高功率应用的表面声波滤波器的各种器件的新配置，其可以满足温度补偿和散热要求。(C)2019由Elsevier Ltd代表Acta Materialia Inc.发布。
Application of the surface activated bonding (SAB) method to direct bonding of LiNbO3 and SiC was investigated. SAB using argon fast atom beam bombardment resulted in the successful formation of a room-temperature bonded LiNbO3/SiC wafer for the first time. Cross-sectional transmission electron microscopy (TEM) observations showed a void-free bonded interface at the atomic level. The bonded interface had an amorphous-like layer that was a few nanometers thick, which was considered to be formed during the bombardment process. The resulting LiNbO3/SiC structure can be utilized to realize a new configuration of various devices including surface acoustic wave filters for use in high-power applications that can satisfy both temperature compensation and heat dissipation requirements. (C) 2019 Published by Elsevier Ltd on behalf of Acta Materialia Inc.