High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding
High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding
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DOI：
10.1364/oe.16.011513
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发表时间：
2008-07-21
期刊：
影响因子：
3.8
通讯作者：
Lipson, Michal
中科院分区：
文献类型：
--
作者：
Chen, Long;Dong, Po;Lipson, Michal
我们展示了锗光电探测器集成在亚微米硅波导制造的低温（0.4 A/W和估计的量子效率超过90%。(C)2008年美国光学学会。
We demonstrate germanium photodetectors integrated on submicron silicon waveguides fabricated with a low temperature ( 0.4 A/W and an estimated quantum efficiency of above 90%. (C) 2008 Optical Society of America.