Measurement and analysis of photoluminescence in GaN
Measurement and analysis of photoluminescence in GaN
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DOI：
10.1063/5.0041608
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发表时间：
2021-03-28
影响因子：
3.2
通讯作者：
Reshchikov, Michael A.
中科院分区：
文献类型：
--
作者：
Reshchikov, Michael A.
光致发光光谱是研究半导体特性和识别点缺陷的有力工具。氮化镓（GaN）是一种卓越的半导体材料，用于新一代明亮的白色LED、蓝色激光器和高功率电子器件。在这篇文章中，我们介绍了PL实验的细节，并讨论了可能的错误来源。对近带边发射的简要分析包括GaN的基本特性，关于这种材料中激子的基本发现，以及对鲜为人知的细节的解释。本文综述了GaN中点缺陷光致发光定量分析的现代方法。介绍了未掺杂GaN中缺陷的最新分类及其最新识别。讨论了GaN的PL谱解释中的典型错误，并驳斥了有关PL的神话。
Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor properties and identifying point defects. Gallium nitride (GaN) is a remarkable semiconductor material for its use in a new generation of bright white LEDs, blue lasers, and high-power electronics. In this Tutorial, we present details of PL experiments and discuss possible sources of mistakes. A brief analysis of near-band-edge emission includes basic characterization of GaN, essential findings about excitons in this material, and the explanation of less known details. We review modern approaches of quantitative analysis of PL from point defects in GaN. The updated classification of defects in undoped GaN and their latest identifications are presented. Typical mistakes in the interpretation of PL spectra from GaN are discussed, and myths about PL are refuted.