Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways
Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways
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DOI：
10.1149/2.008311jss
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发表时间：
2013-01-01
影响因子：
2.2
通讯作者：
Babu, S. V.
中科院分区：
文献类型：
--
作者：
Matovu, J. B.;Ong, P.;Babu, S. V.
在CMOS器件中制造InGaAs n沟道需要在Si衬底和InGaAs沟道层之间插入GaAs或InP缓冲层，其必须被平坦化以使得能够生长没有由于不均匀表面形貌而导致的缺陷的沟道。本报告讨论了材料去除率（RRs）和AsH3演变过程中观察到的化学机械抛光（CMP）的GaAs使用aq。过氧化氢（H2O2）溶液和含有H2O2的二氧化硅浆料。GaAs RR与去离子水或单独的二氧化硅浆料可以忽略不计。他们的水q值相对较高。单独的H2O2溶液，并表现出强烈的pH值依赖性，在碱性区域具有显着较高的RR。将二氧化硅颗粒添加到aq. H_2O_2没有显著增加GaAs的RR。本文研究了GaAs在水溶液中溶解过程中三氢化砷（AsH_3）的演化。H2O2溶液在碱性pH范围内类似地高于中性pH或酸性pH范围。然而，在抛光期间没有测量到AsH3，这显然是因为AsH3的相对高的水溶性。在这份报告中，GaAs的去除率和AsH3的形成进行了分析，使用接触角测量，X射线光电子能谱（XPS）和X射线荧光（XRF）光谱的数据。提出了导致材料去除的反应途径。(C)2013年电化学学会。All rights reserved.
The fabrication of InGaAs n-channels in CMOS devices requires an intervening buffer layer of GaAs or InP between a Si substrate and the InGaAs channel layer, which has to be planarized to enable the growth of a channel that is free of defects due to uneven surface topography. This report discusses the material removal rates (RRs) and AsH3 evolution observed during chemical mechanical polishing (CMP) of GaAs using aq. solutions of hydrogen peroxide (H2O2) and silica slurries containing H2O2. GaAs RRs were negligible with deionized water or with silica slurries alone. They were relatively high in aq. solutions of H2O2 alone and showed a strong pH-dependence, with significantly higher RRs in the alkaline region. The addition of silica particles to aq. H2O2 did not increase the GaAs RRs significantly. The evolution of arsenic trihydride (AsH3) during the dissolution of GaAs in aq. H2O2 solution was similarly higher in the basic pH range than in neutral pH or in the acidic pH range. However, no AsH3 was measured during polishing, evidently because of the relatively high water solubility of AsH3. In this report, GaAs removal rates and AsH3 formation are analyzed using data from contact angle measurements, X-Ray photoelectron spectroscopy (XPS), and X-Ray fluorescence (XRF) spectroscopy. Reaction pathways leading to material removal are proposed. (C) 2013 The Electrochemical Society. All rights reserved.