Low power complementary metal-oxide semiconductor class-G audio amplifier with gradual power supply switching
Low power complementary metal-oxide semiconductor class-G audio amplifier with gradual power supply switching
复制标题
具有渐进式电源切换功能的低功率互补金属氧化物半导体 G 类音频放大器
DOI：
--
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
E. Sánchez
中科院分区：
文献类型：
--
作者：
Bharadvaj Bhamidipati;Adrian I. Colli;E. Sánchez
介绍了一种采用电源渐变开关的低功耗互补金属氧化物半导体(CMOS)G类音频放大器的结构、设计与实现。建议的G类放大器输出级战略性地使用AB类输出级和C类输出级的并联，AB类输出级从较小的电源(V DDL/V SSH)运行，C类输出级(从V SSL到V DDL的交叉)从较高的电源(V DDH/V SSH)运行。GPSS是使用带有电平移位器的有效偏置方案来实现的。此外，所提出的与负反馈相结合的偏置方案能够在电源转换期间实现低失真。实验结果表明，该G类放大器的−为82.5dBTHD+N，峰值功率为50 mW，静态功耗为350mW。G类放大器采用标准μ90 nm工艺实现，硅面积为0.08mm2。
The architecture, design and implementation of a low power complementary metal-oxide semiconductor (CMOS) class-G audio amplifier with gradual power-supply switching (GPSS) are presented. The proposed class-G amplifier output stage strategically uses the parallel connection of a class-AB output stage operating from smaller supplies (V DDL/V SSL), and a class-C output stage (with crossover from V SSL to V DDL) operating from higher supplies (V DDH/V SSH). GPSS is achieved using an efficient biasing scheme with level shifters. Moreover, the proposed biasing scheme in conjunction with negative feedback enables low distortion during the power-supply transition. Experimentally, the class-G amplifier prototype achieves a −82.5 dB THD + N, a peak load power of 50 mW and a quiescent power consumption of 350 μW. The proposed class-G amplifier was implemented in a standard CMOS 90 nm technology and occupies an active silicon area of 0.08 mm2.