Growth mode transition from layer by layer to step flow during the growth of heteroepitaxial SrRuO3 on (001) SrTiO3
Growth mode transition from layer by layer to step flow during the growth of heteroepitaxial SrRuO3 on (001) SrTiO3
复制标题
DOI：
10.1063/1.1389837
复制
发表时间：
2001-09-03
影响因子：
4
通讯作者：
Blank, DHA
中科院分区：
文献类型：
--
作者：
Choi, J;Eom, CB;Blank, DHA
利用原位高压反射高能电子衍射（RHEED）和原子力显微镜（AFM）观察了在（001）SrTiO3衬底上异质外延SrRuO3薄膜生长初期从二维逐层生长模式向阶梯流生长模式的转变。当生长模式为二维逐层生长时，在第一次振荡中的每个激光脉冲之后没有RHEED强度恢复。另一方面，在第二次振荡中，它变得更加明显，并最终达到一个动态稳定状态，在该状态下，生长模式完全转变为阶跃流动模式。生长模式转变的起源可以归因于吸附原子的迁移率的变化和表面终止层从衬底到膜的切换。通过原子层控制生长的具有原子级光滑表面的SrRuO 3薄膜可用于氧化物多层异质结构器件。(C)2001年美国物理学会。
We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices. (C) 2001 American Institute of Physics.