Laser photochemical etching of silicon
Laser photochemical etching of silicon
复制标题
硅的激光光化学蚀刻
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
J. Alderman
中科院分区：
文献类型：
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作者：
S. Affrossman;R. Bailey;C. H. Cramer;F. Cruickshank;J. MacAllister;J. Alderman
研究了氩激光诱导氯离子对单晶硅的化学腐蚀。蚀刻速率被确定为气体压力、晶体取向、激光功率和波长的函数。通过傅里叶变换红外光谱和X射线光电子能谱对气相和表面产物进行分析，探讨了反应机理。与以前的报道相反，没有观察到Si（111）的热增强蚀刻速率，并且发现即使在高激光功率下，表面上氧化物的存在也会抑制蚀刻。
Argon laser induced chemical etching of single crystal silicon with chlorine is studied. Etch rates are determined as a function of gas pressure, crystal orientation, laser power and wavelength. Analysis of gas phase and surface products by Fourier transform IR and X-ray photoelectron spectroscopy are used to probe the reaction mechanism. Contrary to previous reports, no thermally enhanced etch rate is observed for Si (111) and the presence of oxide on the surface is found to inhibit etching even at high laser power.