OPTICAL PROPERTIES NEAR THE BAND GAP ON HEXAGONAL AND CUBIC GAN
OPTICAL PROPERTIES NEAR THE BAND GAP ON HEXAGONAL AND CUBIC GAN
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DOI：
10.1063/1.111383
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发表时间：
1994-05
影响因子：
4
通讯作者：
H. Okumura;S. Yoshida;T. Okahisa
中科院分区：
文献类型：
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作者：
H. Okumura;S. Yoshida;T. Okahisa
采用微波活化NH3源气体源分子束外延的方法，测量了在GaAs和3C - SiC衬底上外延生长的立方和六方GaN薄膜的光致发光和光反射光谱。利用活化的NH3光束和3C‐SiC衬底改善了涂层的结晶质量，使我们能够获得强光信号。测量光谱表明，立方体GaN的带隙比六方GaN的带隙小190 meV左右。
We have measured the photoluminescence and optical reflection spectra of cubic and hexagonal GaN films epitaxially grown on GaAs and 3C‐SiC substrates by gas‐source molecular beam epitaxy using microwave‐activated NH3 source. The crystalline quality of the epilayers was improved by using an activated NH3 beam and 3C‐SiC substrates, which enabled us to obtain intense optical signals. The measured spectra suggest that the band gap of cubic GaN is around 190 meV smaller than that of hexagonal GaN.