Broadband ZnO single-nanowire light-emitting diode
Broadband ZnO single-nanowire light-emitting diode
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DOI：
10.1021/nl061080t
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发表时间：
2006-08-09
期刊：
影响因子：
10.8
通讯作者：
Ren, Z. F.
中科院分区：
文献类型：
--
作者：
Bao, Jiming;Zimmler, Mariano A.;Ren, Z. F.
我们提出了一种用于发光二极管和激光器的单半导体纳米线可靠电注入的新技术。该方法利用高分辨率负电子束电阻和直接电子束图像化沿纳米线长度精确制造金属顶部触点，而平面衬底用作底部触点。它可以应用于任何具有任意截面的纳米线结构。我们通过构建第一个氧化锌单纳米线发光二极管来证明这种技术。该器件在室温下表现出宽亚带隙发射。
We present a novel technique for reliable electrical injection into single semiconductor nanowires for light-emitting diodes and lasers. The method makes use of a high-resolution negative electron-beam resist and direct electron-beam patterning for the precise fabrication of a metallic top contact along the length of the nanowire, while a planar substrate is used as a bottom contact. It can be applied to any nanowire structure with an arbitrary cross section. We demonstrate this technique by constructing the first zinc oxide single-nanowire light-emitting diode. The device exhibits broad sub-bandgap emission at room temperature.