Fabrication of chemiresistive gas sensors based on multistep reduced graphene oxide for low parts per million monitoring of sulfur dioxide at room temperature
Fabrication of chemiresistive gas sensors based on multistep reduced graphene oxide for low parts per million monitoring of sulfur dioxide at room temperature
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DOI：
10.1016/j.snb.2016.11.018
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发表时间：
2017-04-01
影响因子：
8.4
通讯作者：
Kaur, Amarjeet
中科院分区：
文献类型：
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作者：
Kumar, Ramesh;Avasthi, D. K.;Kaur, Amarjeet
所提出的氧化石墨烯的多步还原包括两步还原过程。氧化石墨烯被水合肼还原，然后用低能氮离子束注入技术进一步还原。从拉曼光谱，氧化石墨烯样品的还原已经估计的基础上的Tusiya和Koenig关系。FT-IR研究表明，在还原时，氧官能团如环氧基、羟基和羧基被去除。离子注入提高了氧化石墨烯的导电性和还原时的比表面积。除还原外，第二步还改变了样品的表面形态，使其更适合于气体吸附。高注入剂量（10（15）ions/cm（2））的样品在低至5 ppm的浓度下具有良好的响应、选择性和稳定性，显示出作为室温化学电阻型SO2气体传感器的潜力。(C)2016爱思唯尔B. V.保留所有权利。
The proposed multistep reduction of graphene oxide includes two-step reduction process. The graphene oxide is reduced by hydrazine hydrate followed by further reduction with low energy nitrogen ion beam implantation technique. From the Raman spectra, reduction of graphene oxide samples has been estimated on the basis of Tuinstra and Koenig relation. FT-IR studies have shown the removal of oxygen functional groups such as epoxy, hydroxyl and carboxylic on reduction. Ion implantation has enhanced electrical conductivity and specific surface area of graphene oxide on reduction. Besides reduction, the second step has modified the surface morphology of the samples making them more appropriate for gas adsorption. The sample with higher implantation dose (10(15) ions/cm(2)) exhibits promising potential for room temperature chemiresistive SO2 gas sensor at ppm levels as low as 5 ppm with reasonable response, selectivity and stability. (C) 2016 Elsevier B.V. All rights reserved.