Planarization of 4H-SiC(0001) by Catalyst-Referred Etching Using Pure Water Etchant
Planarization of 4H-SiC(0001) by Catalyst-Referred Etching Using Pure Water Etchant
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使用纯水蚀刻剂通过催化剂参考蚀刻平坦化 4H-SiC(0001)
DOI：
10.1109/icpt.2014.7017297
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
and K. Yamauchi
中科院分区：
文献类型：
--
作者：
A. Isohashi;Y. Sano;and K. Yamauchi
催化蚀刻(CARE)是一种高贵的平坦化方法，不需要研磨剂。在本文中，我们使用纯水对4H-碳化硅衬底进行护理，以评估处理后表面的去除率和表面粗糙度。4H-SiC(0001)同轴晶片的去除速率为2 nm/h，而在AFM图像中，加工表面清晰地观察到阶梯状结构。
Catalyst-referred etching (CARE) is a noble planarization method which does not require abrasives. In this paper, we applied CARE with pure water to a 4H-SiC substrate in order to evaluate the removal rate and the surface roughness of the processed surface. The removal rate for the 4H-SiC(0001) on-axis wafer was found to be 2 nm/h while, in the AFM images, step-terrace structures were clearly observed on the processed surface.