Analyses of the spreading kinetics of AgCuTi melts on silicon carbide below 900 °C, using a large-chamber SEM
Analyses of the spreading kinetics of AgCuTi melts on silicon carbide below 900 °C, using a large-chamber SEM
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DOI：
10.1016/j.colsurfa.2014.12.039
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发表时间：
2015-03-05
影响因子：
5.2
通讯作者：
Boettcher, Konrad
中科院分区：
文献类型：
--
作者：
Tillmann, Wolfgang;Pfeiffer, Jan;Boettcher, Konrad
熔融金属在陶瓷基体上扩散动力学的研究为确定这两种材料之间相互作用的过程提供了有价值的信息。在实验和理论研究的基础上，对各种高温体系提出了两种确定润湿的类型——反应限制润湿和扩散限制润湿。在此贡献的范围内，agcuti - sic系统进行了研究，尽管其与加入应用程序高度相关，但尚未在基础工作中获得太多关注。实验在大腔室扫描电镜的加热台上进行。这种新颖的方法，允许高分辨率成像和精确观察液滴的变化。在830 - 890摄氏度的温度下，每隔5秒拍摄一次的图像被用来测量湿润表面随时间的变化。在湿润过程中，agcuti熔体表现出不同的扩散阶段。结果表明，在润湿开始时，扩散动力学由三线处的反应速率决定。在达到一定的温度依赖角后，钛的扩散成为主要的限制因素。(C) 2014 Elsevier B.V.版权所有
Studies of the spreading kinetics of molten metals on ceramic substrates provide valuable information about the processes determining the interaction between these two materials. Based on experimental and theoretical works, two determining wetting types have been proposed for a variety of high-temperature systems - the reaction limited wetting and the diffusion-limited wetting. In the scope of this contribution an AgCuTi-SiC-system is investigated, which, despite of its high relevance for joining applications, has not yet gained much attention in fundamental works.The experiments were carried out on a heating stage placed in a large-chamber SEM. This novel method, allows high-resolution imaging and a precise observation of the changes of the liquid drop. Images taken every 5s were used to measure the wetted surface as a function of time at temperatures between 830 and 890 degrees C.The AgCuTi-melt exhibits different spreading stages during the wetting process. It was shown that, at the beginning of the wetting, the spreading kinetics is determined by the reaction rate at the triple line. After reaching a distinct temperature-dependent angle, the titanium diffusion becomes the main limiting factor. (C) 2014 Elsevier B.V. All rights reserved.