The electron effective mass at the bottom of the GaNAs conduction band
The electron effective mass at the bottom of the GaNAs conduction band
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GaNAs导带底部的电子有效质量
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
J. Toivonen
中科院分区：
文献类型：
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作者：
C. Skierbiszewski;I. Gorczyca;S. P. Łepkowski;J. Łusakowski;J. Borysiuk;J. Toivonen
我们根据 GaNxAs1−x/GaAs 单量子阱的光致发光 (PL) 确定了电子有效质量 m*e。带间光学跃迁的能量在能带反交叉模型 (BAC) 的框架内进行分析，该模型解释了 GaN 导带 (CB) 的高度非抛物线性质。从 PL 中我们发现，当 x 从 0.009 增加到 0.04 时，GaNxAs1−x/GaAs 量子阱 (QW) 中 CB 底部的 m*e 从 0.095m0 增加到 0.12m0。我们发现 III-N-V QW 的 BAC 模型预测 m*e 作为电子子带数的函数会大幅增加。我们还使用线性松饼锡轨道 (LMTO) 方法分析了块状 GaNs CB 底部的 m*e，该方法通过包含外部电势进行调整，以正确解释能隙。从 LMTO 计算获得的有效质量依赖性再现了实验结果。讨论了进入 BAC 模型的氮相关 A1 对称态的性质，以及该态与 Ga 悬键态的相似性。
We determined the electron effective mass, m*e, from the photoluminescence (PL) of GaNxAs1−x/GaAs single quantum wells. The energy of the interband optical transitions is analysed within the frame of the band anti-crossing model (BAC), which accounts for a highly nonparabolic nature of the GaNAs conduction band (CB). From the PL we found that m*e at the bottom of the CB in GaNxAs1−x/GaAs quantum wells (QWs) increases from 0.095m0 to 0.12m0 for x increasing from 0.009 to 0.04. We found that the BAC model for III-N-V QWs predicts a strong increase of m*e as a function of the electronic subband number. We analyse also m*e at the bottom of the bulk GaNAs CB using the linear-muffin-tin-orbital (LMTO) method adjusted by inclusion of external potentials to account properly for energy gaps. The effective mass dependence obtained from LMTO calculations reproduces the experimental results. The nature of the nitrogen related A1 symmetry state, which enters in the BAC model, and similarities of this state with the Ga dangling bond state are discussed.