Spin relaxation and all optical polarization switching at 1.52 micrometres in InGaAs(P)/InGaAsP multiple quantum wells
Spin relaxation and all optical polarization switching at 1.52 micrometres in InGaAs(P)/InGaAsP multiple quantum wells
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DOI：
10.1088/0268-1242/14/3/002
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发表时间：
1999-03
影响因子：
1.9
通讯作者：
J. Hyland;G. Kennedy;A. Miller;C. Button
中科院分区：
文献类型：
--
作者：
J. Hyland;G. Kennedy;A. Miller;C. Button
用超短脉冲色心激光直接测量了InGaAs（P）/InGaAsP多量子阱威尔斯中电子自旋弛豫时间与阱宽的关系。测量的时间范围从20到5 ps，大大快于以前确定的GaAs量子威尔斯。此外，我们还在波长为λ的情况下实现了一种基于自旋敏感非线性光学效应的快速全光偏振开关。这种工作波长和观察到的开关恢复时间为5.5 ps，使其成为未来的全光孤子通信系统的一个潜在的有用的元素。
The spin relaxation times of electrons in InGaAs(P)/InGaAsP multiple quantum wells have been directly measured as a function of well width using an ultrashort pulse colour centre laser. The times measured range from 20 to 5 ps, considerably faster than previously determined in GaAs quantum wells. In addition, a fast, all-optical polarization switch based on a spin-sensitive optical nonlinearity is demonstrated at a wavelength of . This operating wavelength and the observed switch recovery time of 5.5 ps make it a potentially useful element for future all-optical soliton communication systems.