NUMERICAL SIMULATION OF THE DEPOSITION PROCESS AND THE EPITAXIAL GROWTH OF CADMIUM TELLURIDE THIN FILM IN A MOCVD REACTOR
NUMERICAL SIMULATION OF THE DEPOSITION PROCESS AND THE EPITAXIAL GROWTH OF CADMIUM TELLURIDE THIN FILM IN A MOCVD REACTOR
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MOCVD反应器中碲化镉薄膜沉积过程及外延生长的数值模拟
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
S. Irvine
中科院分区：
文献类型：
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作者：
Xiaogang Yang;Yiyi Wu;Xiaobing Huang;V. Barrioz;G. Kartopu;S. Monir;S. Irvine
金属有机化学气相沉积(MOCVD)是制备碲化镉(CdTe)等II-VI族化合物薄膜的一种很有吸引力的方法。已知薄膜的生长速率与衬底温度和反应物分压有关，表明沉积过程受多种条件的动力学控制和影响。在沉积过程中，非均相反应对薄膜的形成起着重要的作用，由于反应中间体的脱附，气体和表面反应的耦合使沉积过程变得更加复杂。对沉积机理和动力学的详细了解对于II-VI型MOCVD反应器的设计、优化和放大将是至关重要的。本文给出了在线MOCVD反应器中沉积过程的CFD模拟结果，其中考虑了化学物质的传热和传质。数值模拟采用了大型CFD软件--有限元分析软件--流体力学软件。研究了工艺控制参数如总流量、反应压力和衬底温度对沉积行为的影响。在本研究中，以二甲基镉(DMCd)和二异丙基碲化物(DiPTe)为前驱体，以氢气为载气，氮气为冲洗气体。利用所开发的CFD模型来揭示MOCVD中的沉积机理的能力已经被证明。在355-455°的温度范围内进行了传质和动力学模拟，以符合实验条件。
Metalorganic Chemical Vapour Deposition (MOCVD) is an attractive method for depositing thin films of cadm ium telluride (CdTe) and other group II-VI compound materials. It has been known that the growth rate of CdTe thin film is sen sitive to the substrate temperature and the reactant partial pres sures, indicating that the deposition process is kinetical ly controlled and affected by many conditions. In the deposition process, heterogeneous reactions play an important role in f ilm formation and the process is further complicated by the coupling of gas and surface reactions via desorptio n of the reactive intermediates. A detailed understanding of the deposition mechanism and kinetics will be crucial f or the design, optimization and scale-up of II-VI MOCVD reactors. This paper presents the results of CFD modelling of the deposition process in an inline MOCVD reactor, taki ng into account the heat transfer and mass transport of the chemical species. The numerical simulations have been conducted using the CFD code, ANSYS FLUENT. The influence of the process controlling parameters such as total flow rate, rea ctor pressure and substrate temperature on the deposition behavio ur has been assessed. In the present study, dimethylcadmium (DMCd) and diisopropyltelluride (DiPTe) have been used as prec ursors while H 2 is acting as the carrier gas and N 2 as the flushing gas. The capabilities of using the developed CFD models for revealing the deposition mechanisms in MOCVD have been demonstrated. The simulations have been conducted in both mass transport and kinetics regimes at the temperat ure range of 355-455 ° to match the experimental conditions.