Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride
Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride
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DOI：
10.1063/1.3309840
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发表时间：
2010-03-01
影响因子：
3.2
通讯作者：
Shahedipour-Sandvik, Fatemeh
中科院分区：
文献类型：
--
作者：
Jindal, Vibhu;Shahedipour-Sandvik, Fatemeh
吸附原子的表面扩散强烈影响薄膜的表面形貌。我们已经进行了密度泛函理论计算研究的结合能，迁移途径，和扩散势垒的吸附原子，如Ga和N的非极性表面，如m-和a-平面GaN表面，并将其与c-平面GaN表面的结果进行比较。Ga原子在m面和a面GaN表面上的扩散行为具有很强的各向异性，其低扩散势垒的沟道分别位于a晶向和c晶向。在金属有机化学气相沉积生长的m-和a-平面GaN表面的实验观察显示条纹的表面形态与步骤分别在a-和c-晶体学方向取向。(C)2010年美国物理学会。[doi 10.1063/1.3309840]
Surface diffusion of the adatoms strongly influences the surface morphology of thin films. We have carried out density functional theory calculations to study the binding energies, migration pathways, and diffusion barriers for adatoms such as Ga and N on the nonpolar surface such as m- and a-plane GaN surfaces and compare it with the results on c-plane GaN surfaces. A strong anisotropy was observed for the diffusion behavior for Ga adatom on m- and a-plane GaN surfaces with the channels of low diffusion barrier in a- and c-crystallographic directions, respectively. The experimental observation during the metal organic chemical vapor deposition growth of m- and a- plane GaN surfaces show striated surface morphology with the steps oriented in a- and c-crystallographic directions, respectively. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3309840]