Electroless Grafting of Polymer Insulation Layers in Through-Silicon Vias
Electroless Grafting of Polymer Insulation Layers in Through-Silicon Vias
复制标题
硅通孔中聚合物绝缘层的化学接枝
DOI：
10.1149/2.0141910jss
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发表时间：
2019
影响因子：
2.2
通讯作者：
Li Ming
中科院分区：
文献类型：
--
作者：
Liu Yang;Han Yutong;Zhang Junhong;He Junpeng;Hang Tao;Gao Liming;Wu Yunwen;Li Ming
具有聚合物绝缘层的贯通硅通孔(TSV)具有优异的电学性能，在三维封装技术中具有广阔的应用前景。在这项研究中，我们提出了一种化学接枝的方法，以实现在高深宽比TSVS中制备薄绝缘层。所提出的方法是基于乙烯基单体和芳基重氮盐在硅表面的聚合。在TSVS中成功地制备了聚丙烯酸和聚甲基丙烯酸甲酯绝缘层，证明了该方法制备亲水和疏水层的可行性。所得聚合物绝缘层具有高阶跃覆盖率和优异的介电性能。化学接枝法是一种制备高深宽比TSVs中介电性能优异的聚合物绝缘层的新方法。
A through-silicon via (TSV) with a polymeric insulation layer is promising in three-dimensional packaging technology because of its outstanding electrical properties. In this study, we present an electroless grafting method to realize the fabrication of a thin insulation layer in high aspect ratio TSVs. The proposed method is based on the polymerization of a vinyl monomer and an aryl diazonium salt on a silicon surface. Both poly (acrylic acid) and poly (methyl methacrylate) insulation layers were successfully prepared in TSVs to demonstrate the feasibility of the proposed method to fabricate hydrophilic and hydrophobic layers. The resulting polymer insulation layer exhibited high step coverage and superior dielectric properties. The electroless grafting method is a novel synthesis route to prepare polymeric insulation layers with outstanding dielectric properties in high aspect ratio TSVs.