Post-Treatment of TiO2 Film Enables High-Quality Sb2Se3 Film Deposition for Solar Cell Applications.
Post-Treatment of TiO2 Film Enables High-Quality Sb2Se3 Film Deposition for Solar Cell Applications.
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DOI：
10.1021/acsami.2c07157
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发表时间：
2022-07
影响因子：
9.5
通讯作者：
Yan Wang;R. Tang;Lei Huang;Chen Qian;W. Lian;Changfei Zhu;Tao Chen
中科院分区：
文献类型：
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作者：
Yan Wang;R. Tang;Lei Huang;Chen Qian;W. Lian;Changfei Zhu;Tao Chen
二氧化钛薄膜被认为是一种很有前途的宽带隙电子传输材料。但由于Ti-O键较强，其表面呈惰性，导致Sb2Se3等金属硫族化物膜的吸附和沉积困难。在本研究中，通过简单的CdCl2后处理来功能化TiO2薄膜，从而诱导成核位点并生长出高质量的Sb2Se3。界面处理优化了TiO2/Sb2Se3的导带偏移量，从本质上改善了TiO2/Sb2Se3异质结。通过这种方便的接口功能化，Sb2Se3太阳能电池的功率转换效率从2.02显著提高到6.06%。本研究为TiO2作为宽带隙电子输运材料在硫系锑太阳能电池中的应用开辟了新的途径。
The TiO2 thin film is considered as a promising wide band gap electron-transporting material. However, due to the strong Ti-O bond, it displays an inert surface characteristic causing difficulty in the adsorption and deposition of metal chalcogenide films such as Sb2Se3. In this study, a simple CdCl2 post-treatment is conducted to functionalize the TiO2 thin film, enabling the induction of nucleation sites and growth of high-quality Sb2Se3. The interfacial treatment optimizes the conduction band offset of TiO2/Sb2Se3 and leads to an essentially improved TiO2/Sb2Se3 heterojunction. With this convenient interface functionalization, the power conversion efficiency of the Sb2Se3 solar cell is remarkably improved from 2.02 to 6.06%. This study opens up a new avenue for the application of TiO2 as a wide band gap electron-transporting material in antimony chalcogenide solar cells.