Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode
Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode
复制标题
DOI：
10.1063/1.1290458
复制
发表时间：
2000-10-01
影响因子：
3.2
通讯作者：
Koshida, N
中科院分区：
文献类型：
--
作者：
Gelloz, B;Koshida, N
在低工作电压（<5V）下，由n（+）型硅-铟-锡-氧化物薄膜多孔结电致发光（EL）。连续波外量子效率大于1%，功率效率为0.37%。漏电流的显著降低是氧化后EL效率提高的原因。由于多孔硅的缓慢充电，EL时间响应（约30 μ s）比光致发光时间响应慢。在操作期间和老化时没有观察到量子效率的降低。这归因于电化学生长的氧化物，其应提供比初始氢覆盖更好的表面钝化。(C)2000年美国物理学会。[S0021-8979（00）01020-3]。
Highly efficient electroluminescence (EL) is obtained at low operating voltage (< 5 V) from n(+)-type silicon-electrochemically oxidized thin porous silicon-indium-tin-oxide junctions. Continuous wave external quantum efficiency greater than 1% and power efficiency of 0.37% have been achieved. Considerable reduction of leakage current accounts for the enhancement of EL efficiency upon oxidation. The EL time response (approximate to 30 mu s) is slower than the photoluminescence one, due to slow electrical charging of porous silicon. No degradation of quantum efficiency is observed during operation and upon aging. This is attributed to the electrochemically grown oxide, which should provide a better surface passivation than the initial hydrogen coverage. (C) 2000 American Institute of Physics. [S0021-8979(00)01020-3].