Heavily Doped Semiconductor Nanocrystal Quantum Dots
Heavily Doped Semiconductor Nanocrystal Quantum Dots
复制标题
DOI：
10.1126/science.1196321
复制
发表时间：
2011-04-01
期刊：
影响因子：
56.9
通讯作者：
Banin, Uri
中科院分区：
文献类型：
--
作者：
Mocatta, David;Cohen, Guy;Banin, Uri
杂质原子对半导体的掺杂使其在微电子学和光电子学中得到广泛的技术应用。然而，由于如何引入单一杂质的合成挑战，以及缺乏对强量子限制下这种重掺杂限制的基本理解，掺杂已被证明是难以实现的。我们开发了一种用金属杂质掺杂半导体纳米晶体的方法，从而能够控制带隙和费米能。结合光学测量，扫描隧道光谱，和理论揭示了一个有限的杂质带和带拖尾的出现。我们的方法产生的n-和p-掺杂的半导体纳米晶体，这在太阳能电池，薄膜晶体管和光电器件有潜在的应用。
Doping of semiconductors by impurity atoms enabled their widespread technological application in microelectronics and optoelectronics. However, doping has proven elusive for strongly confined colloidal semiconductor nanocrystals because of the synthetic challenge of how to introduce single impurities, as well as a lack of fundamental understanding of this heavily doped limit under strong quantum confinement. We developed a method to dope semiconductor nanocrystals with metal impurities, enabling control of the band gap and Fermi energy. A combination of optical measurements, scanning tunneling spectroscopy, and theory revealed the emergence of a confined impurity band and band-tailing. Our method yields n- and p-doped semiconductor nanocrystals, which have potential applications in solar cells, thin-film transistors, and optoelectronic devices.