Cesiated thin‐film field‐emission microcathode arrays
Cesiated thin‐film field‐emission microcathode arrays
复制标题
铯薄膜场发射微阴极阵列
DOI：
10.1063/1.107699
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发表时间：
1992
影响因子：
4
通讯作者：
C. Holland
中科院分区：
文献类型：
--
作者：
J. M. Macaulay;I. Brodie;C. Spindt;C. Holland
讨论了吸附铯对钼尖薄膜场发射微阴极阵列性能的影响。报告了从50 V到15 V提取每个尖端平均1 nA所需的电压降低。当在阵列电流密度高达100 A/cm 2的情况下连续运行长达650小时时，Cesiated阵列表现出稳定的性能，且漏电流最小。使用Fowler-Nordheim理论，对重介电发射器阵列的电流-电压特性的分析给出了发射面积、功函数和几何因子的值。
The effect of adsorbed cesium on the performance of thin‐film field‐emission microcathode arrays with molybdenum tips is discussed. A reduction in the voltage required to extract an average of 1 nA per tip from 50 to 15 V is reported. Cesiated arrays have exhibited stable performance when operated continuously for up to 650 h at array current densities up to 100 A/cm2, with minimal leakage current. Using the Fowler–Nordheim theory, analysis of current‐voltage characteristics of a heavily cesiated emitter array gives values for the emitting area, work function, and geometrical factor.