Polarity control of GaN grown on ZnO (000(1)over-bar) surfaces
Polarity control of GaN grown on ZnO (000(1)over-bar) surfaces
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DOI：
10.1063/1.2200157
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发表时间：
2006-05-01
影响因子：
4
通讯作者：
Ishii, A
中科院分区：
文献类型：
--
作者：
Kobayashi, A;Kawaguchi, Y;Ishii, A
我们研究了用脉冲激光沉积在o极性ZnO （000 (1) over bar）上的GaN结构性能对生长温度的依赖关系。我们发现，在低于500℃的生长温度下，GaN/ZnO的原子突变异质界面得到了。我们还发现，在室温（RT）下生长的GaN表现出Ga极性，而在700℃下生长的GaN表现出N极性。然而，通过引入RT缓冲层，可以在700℃下生长ga极性GaN。第一性原理计算很好地解释了如何在低温下在原子平坦的o极性ZnO表面上生长ga极性GaN。(c) 2006年美国物理研究所。
We have investigated the growth temperature dependence of the structural properties of GaN deposited on O-polarity ZnO (000 (1) over bar) using pulsed laser deposition. We have found that atomically abrupt GaN/ZnO heterointerfaces are obtained at growth temperatures reduced to below 500 degrees C. We have also found that GaN grown at room temperature (RT) exhibits a Ga polarity while that grown at 700 degrees C exhibits a N polarity. However, it is possible to grow Ga-polarity GaN at 700 degrees C by the introduction of a RT buffer layer. First principles calculations well explain how Ga-polarity GaN may be grown on atomically flat O-polarity ZnO surfaces at low temperatures. (c) 2006 American Institute of Physics.