Large-scale Growth of Copper Oxide Nanowires on Various Copper Substrates
Large-scale Growth of Copper Oxide Nanowires on Various Copper Substrates
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DOI：
10.1016/j.jmst.2013.04.017
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发表时间：
2013-12
影响因子：
10.9
通讯作者：
Y. Yue;Mingji Chen;Y. Ju;Shuai Wang
中科院分区：
文献类型：
--
作者：
Y. Yue;Mingji Chen;Y. Ju;Shuai Wang
采用应力诱导法在各种含铜衬底（包括铜栅、高纯铜箔和小铜块）表面实现了氧化铜纳米线的大规模生长。340 °C的相对低的加热温度被证明产生具有精细晶体结构和大约300的高纵横比的致密纳米线生长。在多层衬底上，逐渐冷却工艺有利于纳米线的生长，但对其他纯铜衬底上纳米线的生长没有影响。所得纳米线的直径主要取决于加热温度。此外，生长在铜网格上的纳米线比生长在其他两个衬底上的纳米线长得多。
Large-scale growth of copper oxide nanowires was realized on surfaces of various copper-containing substrates, including copper grids, high-purity copper foils, and small copper blocks, by the stress-induced method. A relatively low heating temperature of 340 °C was demonstrated to give rise to dense nanowire growth with fine crystal structures and high aspect ratio of approximately 300. Gradual cooling process, which is positive for the growth of nanowires on multi-layer substrates, is shown to have no effect on the nanowire growth on other pure copper substrates. Diameter of as-obtained nanowires is mainly dependent on the heating temperature. Moreover, the nanowires growing on copper grids are much longer than those growing on two other substrates.