Electrical and optical properties of infrared photodiodes using the InAs/Ga1-xInxSb superlattice in heterojunctions with GaSb
Electrical and optical properties of infrared photodiodes using the InAs/Ga1-xInxSb superlattice in heterojunctions with GaSb
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DOI：
10.1063/1.362849
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发表时间：
1996-07-15
影响因子：
3.2
通讯作者：
Johnson, SM
中科院分区：
文献类型：
--
作者：
Johnson, JL;Samoska, LA;Johnson, SM
InAs/Ga 1-xInxSb应变层超晶格（SLS）有望成为长波长红外探测器的替代III-V族半导体系统。在这篇文章中，我们提出了第一次调查，尽我们所知，异质结光电二极管使用这种新材料。该器件通过分子束外延生长在GaSb衬底上，并且由用于具有GaSb接触层的双异质结的38埃InAs/16埃Ga0.64In0.36Sb SLS组成。该结构被设计为优化量子效率，同时最大限度地减少异质界面处的传输势垒。光电二极管通过其性能与SLS材料质量和探测器设计的相关性进行评估。X射线衍射，吸收和霍尔测量用于确定SLS材料的性能。光电二极管的电学和光学特性是使用电流-电压和光谱响应度测量来确定的。在78 K时，这些器件表现出整流电行为和光响应出对应于SLS能隙的10.6 μ m的波长。这些薄层（0.75 μ m）未钝化光电二极管的响应度和电阻在8.8 μ m和78 K下的探测率为1 × 10（10）cm根Hz/W。基于这些设备的性能，我们得出结论，高灵敏度操作的长波长光伏探测器的温度远远超过传统的III-V带隙工程系统，并可能超过碲镉汞，使用这种材料系统是可行的。(C)1996年美国物理学会。
The InAs/Ga1-xInxSb strained layer superlattice (SLS) holds promise as an alternative III-V semiconductor system for long wavelength infrared detectors. In this article, we present the first investigation, to the best of our knowledge, of heterojunction photodiodes using this new material. The devices were grown by molecular beam epitaxy on GaSb substrates, and are comprised of a 38 Angstrom InAs/16 Angstrom Ga0.64In0.36Sb SLS used in double heterojunctions with GaSb contact layers. The structures were designed to optimize the quantum efficiency while minimizing transport barriers at the heterointerfaces. The photodiodes are assessed through the correlation of their performance with the SLS material quality and the detector design. X-ray diffraction, absorption, and Hall measurements are used to determine the SLS material properties. The electrical and optical properties of the photodiodes are determined using current-voltage and spectral responsivity measurements. At 78 K, these devices exhibit rectifying electrical behavior and photoresponse out to a wavelength of 10.6 mu m corresponding to the SLS energy gap. The responsivity and resistance in these thin-layered (0.75 mu m), unpassivated photodiodes result in a detectivity of 1X10(10) cm root Hz/W at 8.8 mu m and 78 K. Based upon the performance of these devices, we conclude that high-sensitivity operation of long-wavelength photovoltaic detectors at temperatures well in excess of conventional III-V band gap-engineered systems, and potentially in excess of HgCdTe, is feasible using this material system. (C) 1996 American Institute of Physics.