Tunnel Magnetoresistance above 170% and Resistance-Area Product of 1 Ω (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
Tunnel Magnetoresistance above 170% and Resistance-Area Product of 1 Ω (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
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DOI：
10.1143/apex.4.033002
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发表时间：
2011-03-01
影响因子：
2.3
通讯作者：
Yuasa, Shinji
中科院分区：
文献类型：
--
作者：
Maehara, Hiroki;Nishimura, Kazumasa;Yuasa, Shinji
通过溅射沉积和原位退火制备的CoFeB/MgO/CoFeB磁性隧道结（MTJ）显示出高的磁阻（MR）比（170%以上）和超低的电阻面积（RA）积[约1.0 Ω（μ m）（2）]。MgO阻挡层约为1 nm厚，最初是无定形的。在300摄氏度的势垒的原位退火促进了具有（001）取向的MgO的结晶，这导致在超低RA产物下的高MR比。目前的成就将使高灵敏度隧道磁阻（TMR）读头的硬盘驱动器的记录密度约为1 Tbit/in的发展。（二）、(C)2011日本应用物理学会
CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) prepared by sputtering deposition and in situ annealing exhibited a high magnetoresistance (MR) ratio (above 170%) and an ultra-low resistance-area (RA) product [about 1.0 Omega (mu m)(2)]. The MgO barrier, which was about 1 nm thick, was initially amorphous. In situ annealing of the barrier at 300 degrees C promoted crystallization of the MgO with (001) orientation, which resulted in the high MR ratio at the ultra-low RA product. The present achievements will enable the development of highly sensitive tunnel magnetoresistive (TMR) read heads for hard disk drives with a recording density of about 1 Tbit/in.(2). (C) 2011 The Japan Society of Applied Physics