Optically induced charge storage and current generation in InAs quantum dots
Optically induced charge storage and current generation in InAs quantum dots
复制标题
InAs 量子点中的光感电荷存储和电流生成
DOI：
10.1103/physrevb.65.073304
复制
发表时间：
2002
影响因子：
3.7
通讯作者：
L. Samuelson
中科院分区：
文献类型：
--
作者：
H. Pettersson;L. Bååth;N. Carlsson;W. Seifert;L. Samuelson
我们报道了InP基质中自组装的InAs量子点的光致电荷存储效应和电流产生。光子能量高于约0.86 eV的照明有效地将点加载到最大约1个孔/点。在较低光子能量下的光谱响应在较高的温度下得到强烈的增强。我们给出了一个详细的点平衡模型，并讨论了与空穴积累有关的热辅助光激发过程。我们还表明，这些过程使这些点充当纳米尺度的温变电流发生器。
We report on optically induced charge storage effects and current generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.