Imaging of surface acoustic waves on GaAs using 2D confocal Raman microscopy and atomic force microscopy
Imaging of surface acoustic waves on GaAs using 2D confocal Raman microscopy and atomic force microscopy
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DOI：
10.1063/5.0034572
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发表时间：
2021-01-18
影响因子：
4
通讯作者：
Han, Sang M.
中科院分区：
文献类型：
--
作者：
Rummel, Brian Douglas;Miroshnik, Leonid;Han, Sang M.
在GaAs（100）衬底上制作了声表面波器件，以证明二维拉曼显微术作为压电衬底表面声波成像技术的能力。表面声波是使用双端口叉指换能器平台产生的，该平台被修改以产生表面驻波。我们导出了一个分析模型，将拉曼峰展宽与声表面波在GaAs表面产生的近表面应变场联系起来。原子力显微镜用于确认驻声波的存在，在驻波的波腹处分辨出3nm的总垂直位移。应力计算进行成像技术和良好的协议，证明了这种拉曼分析的潜力。
Surface acoustic wave devices have been fabricated on a GaAs (100)substrate to demonstrate the capability of 2D Raman microscopy as an imaging technique for acoustic waves on the surface of a piezoelectric substrate. Surface acoustic waves are generated using a two-port interdigitated transducer platform, which is modified to produce surface standing waves. We have derived an analytical model to relate Raman peak broadening to the near-surface strain field of the GaAs surface produced by the surface acoustic waves. Atomic force microscopy is used to confirm the presence of a standing acoustic wave, resolving a total vertical displacement of 3nm at the antinode of the standing wave. Stress calculations are performed for both imaging techniques and are in good agreement, demonstrating the potential of this Raman analysis.