Electronic structure and topography of annealed SrTiO3(111) surfaces studied with MIES and STM

Electronic structure and topography of annealed SrTiO3(111) surfaces studied with MIES and STM
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DOI:
10.1016/j.apsusc.2005.01.116
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发表时间:
2005-09-30
影响因子:
6.7
通讯作者:
Maus-Friedrichs, W
Maus-Friedrichs, W
中科院分区:
材料科学1区
文献类型:
--
作者:
Gömann, A;Gömann, K;Maus-Friedrichs, W

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ABO(3)型钙钛矿如钛酸锶(SrTiO 3)作为在高温下工作的氧传感器的材料具有很大的实际意义。众所周知,表面层显示出与本体相比不同的性质。对于SrTiO 3(100)和(110)表面存在许多研究,这些研究已经调查了作为制备条件的函数的电子结构和形貌的变化。他们已经表明了一个相当复杂的行为的表面和近表面区域的SrTiO 3在高温下。到目前为止,SrTiO_3(111)表面在热处理下的行为还不完全清楚。这一贡献的目的是工作之间的关系的表面形貌相对于制备条件和电子结构的同时变化。我们应用扫描隧道显微镜(STM),以调查的表面形貌,此外,亚稳态碰撞电子能谱(MIES)研究重建SrTiO 3(111)表面的表面电子结构。在还原和氧化条件下将晶体加热至1000摄氏度。这两种制备条件都会引起表面形貌和电子结构的强烈变化。发现最上层的微刻面。(c)2005年爱思唯尔B.V.保留所有权利。
Perovskites of ABO(3) type like strontium titanate (SrTiO3) are of great practical concern as materials for oxygen sensors operating at high temperatures. It is well known that the surface layer shows different properties compared to the bulk. Numerous studies exist for the SrTiO3(100) and (110) surfaces which have investigated the changes in the electronic structure and topography as a function of the preparation conditions. They have indicated a rather complex behaviour of the surface and the near surface region of SrTiO3 at elevated temperatures. Up to now, the behaviour of the SrTiO3(111) surfaces under thermal treatment is not sufficiently known. This contribution is intended to work out the relation between alteration of the surface topography with respect to the preparation conditions and the simultaneous changes of the electronic structure. We applied scanning tunneling microscopy (STM) to investigate the surface topography and, additionally, metastable impact electron spectroscopy (MIES) to study the surface electronic structure of reconstructed SrTiO3(111) surfaces. The crystals were heated up to 1000 degrees C under reducing and oxidizing conditions. Both preparation conditions cause strong changes of the surface topography and electronic structure. A microfaceting of the topmost layers is found. (c) 2005 Elsevier B.V. All rights reserved.