Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO3 Substrate
Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO3 Substrate
复制标题
在 Nb 掺杂 SrTiO3 衬底上生长的单胞 FeSe 薄膜在接近开隙温度时的界面铁电转变
DOI：
10.1103/physrevlett.114.037002
复制
发表时间：
2015
影响因子：
8.6
通讯作者：
Shen Z. -X.
中科院分区：
文献类型：
--
作者：
Cui Y. -T.;Moore R. G.;Zhang A. -M.;Tian Y.;Lee J. J.;Schmitt F. T.;Zhang W. -H.;Li W.;Yi M.;Liu Z. -K.;Hashimoto M.;Zhang Y.;Lu D. -H.;Devereaux T. P.;Wang L. -L.;Ma X. -C.;Zhang Q. -M.;Xue Q. -K.;Lee D. -H.;Shen Z. -X.
我们报道了在Nb掺杂的FeSe薄膜上生长的单胞FeSe薄膜的互感和非弹性拉曼光谱测量中的强烈反常现象，这些反常现象发生在类超导带隙打开的温度附近。分析表明，这一反常现象与界面附近薄层中的加宽铁电相变有关。铁电转变温度和能隙开启温度的重合增加了薄膜-衬底相互作用对该系统中强库珀配对所起的中心作用。我们讨论了可以解释这种巧合的情景。
We report findings of strong anomalies in both mutual inductance and inelastic Raman spectroscopy measurements of single-unit-cell FeSe film grown on Nb-doped, which occur near the temperature where the superconductinglike energy gap opens. Analysis suggests that the anomaly is associated with a broadened ferroelectric transition in a thin layer near theinterface. The coincidence of the ferroelectric transition and gap-opening temperatures adds credence to the central role played by the film-substrate interaction on the strong Cooper pairing in this system. We discuss scenarios that could explain such a coincidence.