Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
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DOI：
10.1109/led.2003.813375
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发表时间：
2003-07-01
影响因子：
4.9
通讯作者：
Eastman, LF
中科院分区：
文献类型：
--
作者：
Kim, H;Thompson, RM;Eastman, LF
作者报道了氮化硅（SiN）表面钝化和高电场应力（热电子应力）对未掺杂AlGaN-GaN功率HFET退化的影响。应力器件表现出在漏极电流和最大的寄生漏极串联电阻，栅极泄漏，和亚阈值电流的增加和减少。未钝化的器件显示出比SiN钝化的器件更显著的退化。从未钝化的器件中观察到栅滞后现象，并通过SiN钝化消除。然而，SiN钝化器件在高电场应力后也显示出栅滞后现象，这表明在高电场应力测试期间可能发生表面陷阱分布的变化。
The authors report on the effects of silicon nitride (SiN) surface passivation and high-electric field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs. Stressed devices demonstrated a decrease in the drain current and maximum transconductance and an increase in the parasitic drain series resistance, gate leakage, and subthreshold current. The unpassivated devices showed more significant, degradation than SiN passivated devices. Gate lag phenomenon was observed from unpassivated devices and removed by SiN passivation. However, SiN passivated devices also showed gate lag phenomena after high-electric field stress, which suggests possible changes in surface trap profiles occurred during high-electric field stress test.