Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects
Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects
复制标题
DOI：
10.1016/j.actamat.2013.07.043
复制
发表时间：
2013-10
期刊：
影响因子：
9.4
通讯作者：
Byunghoon Lee;H. Jeon;Kee-Won Kwon;Hoo-Jeong Lee
中科院分区：
文献类型：
--
作者：
Byunghoon Lee;H. Jeon;Kee-Won Kwon;Hoo-Jeong Lee
本研究探讨了在Cu/Sn/Cu键合结构中采用化学镀Ni（P）/薄Cu双层阻挡层进行三维互连的可能性。我们的材料分析表明，双层屏障有效地充当了扩散屏障，并在高于300 °C的温度下防止了全面的材料相互作用。这种抑制金属间化合物反应和限制Cu扩散导致棒状Cu 6Sn 5化合物的形成，呈现出嵌入有强Cu 6Sn 5棒的韧性Sn的独特显微结构。我们使用搭接剪切测试和断裂分析的机械表征表明，具有这样的微观结构的样品显示出高的结合强度与一定的延展性，高机械可靠性的理想组合。
This study explored the possibility of employing a bi-layer barrier of electroless-plated Ni(P)/thin Cu layers in a Cu/Sn/Cu bonding structure for three-dimensional interconnects. Our materials analysis revealed that the bi-layer barrier served effectively as a diffusion barrier and prevented full-scale materials interaction for temperatures higher than 300 °C. Such suppression of an intermetallic compound reaction and limiting Cu diffusion led to the formation of a rod-shaped Cu6Sn5compound, rendering a unique microstructure of ductile Sn embedded with strong Cu6Sn5rods. Our mechanical characterization using lap-shear testing and fracture analysis revealed that the sample with such a microstructure displayed a high bonding strength with some ductility, a desirable combination for high mechanical reliability.