Source/Load-Pull Characterisation of GaN on Si HEMTs with Data Analysis Targeting Doherty Design
Source/Load-Pull Characterisation of GaN on Si HEMTs with Data Analysis Targeting Doherty Design
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通过针对 Doherty 设计的数据分析对 Si HEMT 上的 GaN 进行源/负载牵引表征
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
V. Camarchia
中科院分区：
文献类型：
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作者：
R. Quaglia;A. Piacibello;F. Costanzo;R. Giofré;M. Casbon;R. Leblanc;V. Valenta;V. Camarchia
本文介绍了Si衬底上GaN hemt的源/负载-拉特性，并对测量数据进行了分析，以帮助17 - 20ghz频段卫星通信应用的Doherty功率放大器的设计。特别是，在AB类和C类中，基本负载-拉力用于确定输出功率和效率轮廓，并评估性能与设备尺寸的可扩展性。利用二次谐波源/负载-拉数据确定匹配网络合成时要避免的谐波阻抗区域。负载-拉力数据允许预测在设计阶段合成的最佳负载调制轨迹以及在效率，增益压缩和相位失真方面的相关性能。
This paper presents the source/load-pull characterisation of GaN HEMTs on Si substrate, with an analysis of the measurement data oriented to aid the design of Doherty power amplifiers for satellite communication applications in the 17–20 GHz band. In particular, fundamental load-pull, in both class AB and C, is used to identify the output power and efficiency contours and assess the scalability of the performance vs. device size. Second harmonic source/load-pull data is used to determine the harmonic impedance regions to avoid during matching network synthesis. The load-pull data allows to predict the optimum load modulation trajectory to be synthesised in the design phase and the associated performance in terms of efficiency, gain compression and phase distortion.