Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction
Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction
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DOI：
10.1063/1.3467461
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发表时间：
2010-07-19
影响因子：
4
通讯作者：
Choi, Yang-Kyu
中科院分区：
文献类型：
--
作者：
Kim, Sungho;Jeong, Hu Young;Choi, Yang-Kyu
研究了Al/TiOx/TiO 2/Al异质结构的可逆电阻开关效应。该RS归因于由TiOx层中的局部陷阱控制的空间电荷限制传导（SCLC）。将已有的SCLC理论扩展到描述电阻突变。从实验数据中提取自由载流子密度与俘获载流子密度之比，建立了一个分析模型，以显示能量呈指数分布的陷阱。该模型也适用于其它物质系统中界面型陷阱引起的RS现象。(C)2010年美国物理学会。[doi：10.1063/1.3467461]
The reversible resistance switching (RS) effect of the Al/TiOx/TiO2/Al heterostructure is investigated in this study. This RS was attributed to space-charge-limited conduction (SCLC) as controlled by localized traps in the TiOx layer. The preexisting SCLC theory was extended to describe the abrupt resistance transition. An analytical model was developed with consideration of the ratio of free and trapped carrier density, which was extracted from the experimental data to show exponentially distributed traps in energy. The proposed model can be applicable to RS phenomena induced by interface-type traps in other material system. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467461]