Molecular ferroelectricity of vinylidene fluoride oligomer investigated by atomic force microscopy
Molecular ferroelectricity of vinylidene fluoride oligomer investigated by atomic force microscopy
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原子力显微镜研究偏二氟乙烯低聚物的分子铁电性
DOI：
10.1143/jjap.40.4361
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发表时间：
2001
影响因子：
1.5
通讯作者：
K. Matsushige
中科院分区：
文献类型：
--
作者：
K. Noda;K. Ishida;A. Kubono;T. Horiuchi;H. Yamada;K. Matsushige
通过原子力显微镜（AFM）研究了新合成的偏二氟乙烯（VDF）低聚物薄膜中形成的局部铁电域的纳米级电特性。局部极化和压电响应观察表明，通过在导电 AFM 尖端和底部电极之间施加直流或脉冲电压，可以在纳米厚的薄膜中可逆地形成和擦除极化域。形成的域尺寸取决于脉冲极化条件，并且当脉冲电压的幅度和持续时间增加时增加。成功创建了直径为 65 nm 的本地域。这项工作的结果与之前对铁电聚合物薄膜进行的研究结果相当，表明这种材料是铁电应用（例如高密度数据存储）和铁电特性分子控制的有前途的候选材料之一。
Nanometer-scale electrical properties of local ferroelectric domains formed in thin films of newly synthesized vinylidene fluoride (VDF) oligomer were investigated by atomic force microscopy (AFM). Local poling and observation of the piezoelectric response revealed that the polarized domains were reversibly formed and erased in a nanometer-thick film by applying dc or pulse voltages between the electrically conductive AFM tip and the bottom electrode. The formed domain size depends on the pulse poling conditions and increases when the magnitude and the duration of a pulse voltage are increased. A local domain with a diameter of 65 nm was successfully created. The results in this work are comparable to those of previous studies performed on ferroelectric polymer thin films, suggesting that this material is one of the promising candidates for ferroelectric applications such as high-density data storages, and for molecular controls of ferroelectric properties.