Study on the potential of chemo-mechanical-grinding (CMG) process of sapphire wafer
Study on the potential of chemo-mechanical-grinding (CMG) process of sapphire wafer
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DOI：
10.1007/s00170-016-9836-1
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发表时间：
2017-07-01
影响因子：
3.4
通讯作者：
Yuan, Julong
中科院分区：
文献类型：
--
作者：
Wu, Ke;Zhou, Libo;Yuan, Julong
化学机械磨削（CMG）是一种将磨料与工件之间的化学反应和机械磨削结合为一个过程的复合磨削工艺。该方法已成功地应用于对几何精度和表面质量都有要求的硅片加工过程中。本文旨在研究CMG工艺在单晶蓝宝石晶片制造工艺中的潜力。根据两种不同类型的CMG砂轮的实验结果，从化学效应和机械效应两个方面分析了CMG砂轮材料去除的基本机理。实验结果表明，氧化铬（Cr2O3）的材料去除率（MRR）和表面质量优于二氧化硅（SiO2）。这也表明，无论在干燥条件还是潮湿条件下，CMG都有潜力实现蓝宝石晶片的优异表面质量和令人印象深刻的几何精度。同时，拉曼光谱测试结果表明，采用Cr2O3作为磨料，蓝宝石晶片亚表面损伤几乎检测不到。透射电子显微镜（TEM）分析表明，在CMG过程中，如果化学作用不足以满足与机械作用的平衡，则在顶面可能存在小于50 nm的亚表面损伤。
Chemo-mechanical-grinding (CMG) is a hybrid process which integrates chemical reaction and mechanical grinding between abrasives and workpiece into one process. It has been successfully applied into manufacturing process of silicon wafers where both geometric accuracy and surface quality are required. This paper aims to study the potential of CMG process in manufacturing process of single crystal sapphire wafers. The basic material removal mechanism in terms of chemical effect and mechanical effect in CMG process has been analysed based on experiment results of two different kinds of CMG wheels. The experiment results suggest that chromium oxide (Cr2O3) performs better than silica (SiO2) in both material removal rate (MRR) and surface quality. It also reveals that, no matter under dry condition or wet condition, CMG is with potential to achieve excellent surface quality and impressive geometric accuracy of sapphire wafer. Meanwhile, test result by Raman spectrum shows that, by using Cr2O3 as abrasive, the sub-surface damage of sapphire wafer is hardly to be detected. Transmission electron microscopy (TEM) tells that the sub-surface damage, about less than 50 nm, might remain on the top surface if chemical effect is not sufficient enough to meet the balance with mechanical effect in CMG process.