Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments
Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments
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DOI：
10.1016/j.nima.2007.07.068
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发表时间：
2007-12
影响因子：
1.4
通讯作者：
L. Gonella;F. Faccio;M. Silvestri;S. Gerardin;D. Pantano;V. Re;M. Manghisoni;L. Ratti;A. Ranieri
中科院分区：
文献类型：
--
作者：
L. Gonella;F. Faccio;M. Silvestri;S. Gerardin;D. Pantano;V. Re;M. Manghisoni;L. Ratti;A. Ranieri
在高能物理（HEP）实验中的应用程序的总电离剂量（TID）响应的商业130 nm CMOS技术的照射过程中的铸造厂到铸造厂的变化和偏置条件的影响进行了研究。来自三家不同制造商的n沟道和p沟道MOSFET已接受了高达100 Mrad（SiO2）的X射线辐照。即使TID的效果是定性相似的，退化的量被示出从铸造厂到铸造厂变化很大，可能取决于STI氧化物和/或掺杂分布在衬底中的处理。辐照期间的偏倚显示对TID响应也有很大影响，证明在最差情况偏倚条件下的暴露大大高估了器械在其寿命期间可能经历的降解。总体而言，我们的研究结果增加了130 nm CMOS技术可用于未来HEP实验的信心，即使没有设计硬度解决方案，只要在电路的整个制造阶段持续监测辐射响应。
The impact of foundry-to-foundry variability and bias conditions during irradiation on the Total Ionizing Dose (TID) response of commercial 130-nm CMOS technologies have been investigated for applications in High Energy Physics (HEP) experiments. n- and p-channel MOSFETs from three different manufacturers have been irradiated with X-rays up to more than 100Mrad (SiO2). Even though the effects of TID are qualitatively similar, the amount of degradation is shown to vary considerably from foundry to foundry, probably depending on the processing of the STI oxide and/or doping profile in the substrate. The bias during irradiation showed to have a strong impact as well on the TID response, proving that exposure at worst case bias conditions largely overestimates the degradation a device may experience during its lifetime. Overall, our results increase the confidence that 130-nm CMOS technologies can be used in future HEP experiments even without Hardness-By-Design solutions, provided that constant monitoring of the radiation response is carried out during the full manufacturing phase of the circuits.