Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators
Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators
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DOI：
10.1109/transducers.2019.8808667
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发表时间：
2019-06
期刊：
影响因子：
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通讯作者：
Xia Liu;Arnob Islam;P. Feng
中科院分区：
文献类型：
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作者：
Xia Liu;Arnob Islam;P. Feng
二碲化钼(MoTe2)是一种快速发展起来的二维过渡金属二卤化物(TMDC)层状材料，具有相变能垒低、禁带宽度接近硅(Si)等特点。这些吸引人的特性使其成为未来纳米电子学研究的重点。在这里，我们报告了几层MoTe2悬浮沟道晶体管(SCT)和工作在高频(HF)区域的纳米机电谐振器的首次演示。MoTe2 SCT在ION/IOff≈104时表现出开/关比水平。我们还介绍了利用六方氮化硼(h-BN)晶体对MoTe2谐振器进行钝化，这实质上是产生了h-BN/MoTe2异质结双晶。此外，我们还研究了谐振器的电调谐特性，观察到了栅极电压(VG)从0到Δ16V对≈f/f−13%的谐振频率的调谐。
Molybdenum ditelluride (MoTe2) is a rapidly emerging two-dimensional (2D) transition metal dichalcogenide (TMDC) layered material thanks to the features of low energy barrier for phase transition and the sizeable bandgap close to that of silicon (Si). These attractive features make it a focus of substantial research interest in future nanoelectronics. Here, we report on the first demonstration of few-layer MoTe2 suspended channel transistors (SCTs) and nanoelectromechanical resonators operating in the high frequency (HF) regime. MoTe2 SCTs exhibit On/Off ratio levels at IOn/IOff ≈ 104. We also present the passivation of MoTe2 resonators by using hexagonal boron nitride (h-BN) crystal, which essentially creates h-BN/MoTe2 heterostructure bimorphs. Moreover, we investigate the electrical tuning of the resonator and observe resonance frequency tuning of Δf/f ≈ 13% by varying gate voltage (VG) from 0 to −16V.