Domain wall motion at low current density in a synthetic antiferromagnet nanowire
Domain wall motion at low current density in a synthetic antiferromagnet nanowire
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DOI：
10.1088/1361-6463/ace6b4
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发表时间：
2022-05
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通讯作者：
Christopher E A Barker;S. Finizio;E. Haltz;S. Mayr;P. Shepley;T. Moore;G. Burnell;J. Raabe;C. Marrows
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作者：
Christopher E A Barker;S. Finizio;E. Haltz;S. Mayr;P. Shepley;T. Moore;G. Burnell;J. Raabe;C. Marrows
磁畴壁的电流驱动运动是磁跑道存储器的工作原理。在这种类型的自旋电子技术中，高电流密度用于推动磁性纳米线中的DW运动，导致显著的线加热，从而浪费了能量。已知合成反铁磁体在高电流密度下表现出非常快的DW运动，但在运动开始时的低电流密度受到的关注较少。本文采用扫描透射x射线显微镜研究了SAF多层DWs对短电流脉冲的响应。我们观察到DWs在（3.5±0.4）×1011 A m−2下脱落，并且与缺乏反铁磁耦合的类似多层膜相比，DWs在5 ns持续电流脉冲下的移动速度更快。结果表明，SAF结构的DWs在低能耗赛道技术上优于传统的nsamel DWs。
The current-driven motion of magnetic domain walls (DWs) is the working principle of magnetic racetrack memories. In this type of spintronic technology, high current densities are used to propel DW motion in magnetic nanowires, causing significant wire heating that corresponds to wasted energy. Synthetic antiferromagnets are known to show very fast DW motion at high current densities, but lower current densities around onset of motion have received less attention. Here we use scanning transmission x-ray microscopy to study the response of DWs in a SAF multilayer to short current pulses. We observe that the DWs depin at (3.5±0.4)×1011 A m−2 and move more quickly in response to 5 ns duration current pulses than in comparable multilayers that lack antiferromagnetic coupling. The results suggest that DWs in SAF structures are superior to conventional Néel DWs for low energy consumption racetrack technologies.