Optimized Coalescence Method for the Metalorganic Chemical Vapor Deposition (MOCVD) Growth of High Quality Al-Polarity AlN Films on Sapphire
Optimized Coalescence Method for the Metalorganic Chemical Vapor Deposition (MOCVD) Growth of High Quality Al-Polarity AlN Films on Sapphire
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DOI：
10.1143/jjap.44.l150
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发表时间：
2005-01
影响因子：
1.5
通讯作者：
Q. Paduano;D. Weyburne
中科院分区：
文献类型：
--
作者：
Q. Paduano;D. Weyburne
Epitaxial Al-polarity AlN films were deposited on (0001) sapphire using a metalorganic chemical vapor deposition process involving a modulated ammonia/trimethyl aluminum flow, a pressure reduction from 150 Torr to 40 Torr after the first stage of growth, and growing the first ∼0.1 µm of AlN at a moderate V/III ratio, followed by a switch to low V/III for the remainder of the growth. Smooth, flat epitaxial films with a full width half maximum of the X-ray rocking curves as low as 177 arcseconds/650 arcseconds for the (0002)/(1012) reflections were obtained.
