A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD
A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD
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质子辐照n通道CCD硅双空位双受主能级的研究
DOI：
10.1117/12.2231682
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
A. Holland
中科院分区：
文献类型：
--
作者：
Daniel Wood;David J. Hall;J. Gow;A. Holland
辐射损伤效应对天基探测器来说是个问题。主要来自太阳的高能粒子会损坏探测器并缩短其使用寿命。对于像电荷耦合器件（CCD）这样的图像传感器来说，撞击粒子可能会从CCD晶格中取代硅原子，从而产生缺陷，从而捕获信号电荷并通过涂抹降低图像质量。本文利用质子辐照n通道CCD的单阱抽运技术研究了硅的一个能级的空位缺陷。该技术允许在亚像素水平上研究单个缺陷，提供关于缺陷参数的高度精确的数据。当涉及到CCD性能时，特别重要的是缺陷水平的发射时间常数，这是它可以捕获信号电荷的时间尺度。阱泵送技术是CCD中单个缺陷发射时间常数的直接探测，使得它们比其他缺陷分析技术（如代表性材料的深能级瞬态光谱）更精确地进行研究。
Radiation damage effects are problematic for space-based detectors. Highly energetic particles, predominantly from the sun can damage a detector and reduce its operational lifetime. For an image sensor such as a Charge-Coupled Device (CCD) impinging particles can potentially displace silicon atoms from the CCD lattice, creating defects which can trap signal charge and degrade an image through smearing. This paper presents a study of one energy level of the silicon divacancy defect using the technique of single trap-pumping on a proton irradiated n-channel CCD. The technique allows for the study of individual defects at a sub-pixel level, providing highly accurate data on defect parameters. Of particular importance when concerned with CCD performance is the emission time-constant of a defect level, which is the time-scale for which it can trap a signal charge. The trap-pumping technique is a direct probe of individual defect emission time-constants in a CCD, allowing for them to be studied with greater precision than possible with other defect analysis techniques such as deep-level transient spectroscopy on representative materials.