Experimentally calibrated electro-thermal modeling of temperature dynamics in memristors
Experimentally calibrated electro-thermal modeling of temperature dynamics in memristors
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DOI：
10.1063/5.0039797
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发表时间：
2021-03
影响因子：
4
通讯作者：
Wenqing Shen;Suhas Kumar;Satish Kumar
中科院分区：
文献类型：
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作者：
Wenqing Shen;Suhas Kumar;Satish Kumar
随着纳米级电子器件被封装成密集的三维阵列，在器件操作期间系统的热环境的影响变得至关重要，但尚未清楚地了解。使用鲁棒模型预测温度演变将为复杂的存储器和计算系统提供关键的设计指南。在这里，我们使用了亚微米空间和亚微秒时间分辨率的操作中热和X射线映射功能钽氧化物忆阻开关，并观察到对应于氧浓度梯度的热点，表明局部导电丝的存在。我们构建了一个混合电热模型，包括3D传热和0D电阻开关模型，以预测电气特性和温升，并根据测量结果对其进行校准。我们还演示了忆阻器阵列中的热串扰，以说明局部加热。这样的模型将通过考虑热性能来指导系统设计，这对大多数未来的电子芯片至关重要。
As nanoscale electronic devices are being packed into dense three-dimensional arrays, the effects of the thermal environment of the system during device operation become critical, but are not clearly understood. Predicting the temperature evolution using a robust model will provide critical design guidelines for complex memory and computing systems. Here, we used in-operando thermal and x-ray mapping with sub-micrometer spatial and sub-microsecond temporal resolutions on functioning tantalum oxide memristive switches and observed hot spots corresponding to oxygen concentration gradients, indicating the presence of localized conductive filaments. We constructed a hybrid electro-thermal model comprising 3D heat transfer and 0D resistive switching models to predict electrical characteristics and the temperature rise and calibrated it against the measurements. We also demonstrated thermal crosstalk in an array of memristors to illustrate localized heating. Such a model will guide system design by considering thermal performance, which is critical to most future electronic chips.