Above room temperature operation of short wavelength (λ=3.8μm) strain-compensated In0.73Ga0.27As–AlAs quantum-cascade lasers
Above room temperature operation of short wavelength (λ=3.8μm) strain-compensated In0.73Ga0.27As–AlAs quantum-cascade lasers
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短波长 (λ=3.8μm) 应变补偿 In0.73Ga0.27As–AlAs 量子级联激光器在室温以上运行
DOI：
10.1063/1.1789246
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发表时间：
2004
影响因子：
4
通讯作者：
M. Helm
中科院分区：
文献类型：
--
作者：
M. Semtsiv;M. Ziegler;S. Dressler;W. Masselink;N. Georgiev;T. Dekorsy;M. Helm
我们设计并实现了一个宽增益、低阈值（8 K时Jth= 860 A scincm ~ 2）的量子级联激光器，其波长在3.7 ~ 4.2μm之间。有源区设计基于应变补偿的In 0. 73 Ga 0. 27 As-AlAs on InP。在330 K温度范围内实现了脉冲激光运转，在8 K时获得了6 W的最大单端面输出，在296 K时获得了240 mW的最大单端面输出。温度系数T0为119 K。
We demonstrate the design and implementation of a broad-gain and low-threshold (Jth=860A∕cm2 at 8K) quantum-cascade laser emitting between 3.7 and 4.2μm. The active region design is based on strain-compensated In0.73Ga0.27As–AlAs on InP. Laser operation in pulsed mode is achieved up to a temperature of 330K with maximum single-facet output peak powers of 6W at 8K and 240mW at 296K. The temperature coefficient T0 is 119K.