High-mobility ultrathin semiconducting films prepared by spin coating
High-mobility ultrathin semiconducting films prepared by spin coating
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DOI：
10.1038/nature02389
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发表时间：
2004-03-18
期刊：
影响因子：
64.8
通讯作者：
Afzali, A
中科院分区：
文献类型：
--
作者：
Mitzi, DB;Kosbar, LL;Afzali, A
存款和定制可靠的半导体薄膜的能力（特别是最近的重点是半导体系统）是现代固态电子学不可或缺的（1-3\）。寻找同时提供高载流子迁移率和方便的基于溶液的沉积的薄膜半导体也是一个重要的研究方向，从而期望新技术（如柔性或可穿戴计算机，大面积高分辨率显示器和电子纸）和低成本器件制造（4-11）。在这里，我们展示了一种技术，用于旋转涂层的结晶（类似于50埃），结晶和连续的金属硫属化物薄膜，基于低温分解的高度可溶性肼前体。我们制造了基于半导体SnS 2-xSex薄膜的薄膜场效应晶体管（TFT），其表现出n型传输、大电流密度（> 10（5）A cm（-2））和大于10 cm（2）V-1 s（-1）的迁移率--比先前报道的旋涂半导体的值高一个数量级。预计旋涂技术可应用于一系列金属硫属化物，特别是基于主族金属的那些，以及用于制造各种基于薄膜的器件（例如，太阳能电池（12）、热电器件（13）和存储器件（14））。
The ability to deposit and tailor reliable semiconducting films ( with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics(1-3\). The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies ( such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication(4-11). Here we demonstrate a technique for spin coating ultrathin (similar to50 Angstrom), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (> 10(5) A cm(-2)) and mobilities greater than 10 cm(2) V-1 s(-1) - an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells(12), thermoelectrics(13) and memory devices(14)).