Structural and Magnetic Properties of Sputter-Deposited Mn–Fe–Ga Thin Films
Structural and Magnetic Properties of Sputter-Deposited Mn–Fe–Ga Thin Films
复制标题
溅射沉积 Mn-Fe-Ga 薄膜的结构和磁性
DOI：
--
复制
发表时间：
2015
影响因子：
2.1
通讯作者：
G. Reiss
中科院分区：
文献类型：
--
作者：
A. Niesen;C. Sterwerf;M. Glas;J. Schmalhorst;G. Reiss
我们研究了磁控溅射沉积的Mn-Fe-Ga化合物的结构和磁性。Mn-Fe-Ga薄膜的结晶性使用X射线衍射进行了确认。利用X射线反射和原子力显微镜测量来研究沉积的Mn-Fe-Ga的表面性质、粗糙度、厚度和密度。取决于化学计量，以及所使用的衬底[SrTiO 3（001）和MgO（001）]或缓冲层（TiN），Mn-Fe-Ga以立方或四方畸变相结晶。异常霍尔效应和交替梯度磁力测量证实了强垂直磁晶各向异性。硬磁行为是通过调整成分来实现的。TiN缓冲的Mn2.7Fe0.3Ga揭示了更尖锐的磁化切换相比，无缓冲层。
We investigated the structural and magnetic properties of sputter-deposited Mn-Fe-Ga compounds. The crystallinity of the Mn-Fe-Ga thin films was confirmed using X-ray diffraction. X-ray reflection and atomic force microscopy measurements were utilized to investigate the surface properties, roughness, thickness, and density of the deposited Mn-Fe-Ga. Depending on the stoichiometry, as well as the used substrates [SrTiO3 (001) and MgO (001)] or buffer layer (TiN), Mn-Fe-Ga crystallized in the cubic or the tetragonally distorted phase. Anomalous Hall effect and alternating gradient magnetometry measurements confirmed strong perpendicular magnetocrystalline anisotropy. Hard magnetic behavior was reached by tuning the composition. TiN-buffered Mn2.7Fe0.3Ga revealed sharper switching of the magnetization compared with the unbuffered layers.
影响因子：
4
作者：
Balke, Benjamin;Fecher, Gerhard H.;Felser, Claudia
通讯作者：
Felser, Claudia