A new IGBT structure with a wider safe operating area (SOA)
A new IGBT structure with a wider safe operating area (SOA)
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DOI：
10.1109/ispsd.1994.583697
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发表时间：
1994-05
期刊：
影响因子：
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通讯作者：
N. Thaper;B. J. Baliga
中科院分区：
文献类型：
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作者：
N. Thaper;B. J. Baliga
为了扩大IGBT的正向偏置安全工作区，提出了一种在相邻单元间加入浅偏移器的IGBT新结构。对于n沟道IGBT，IGBT的闭锁极限从700 A/cm/sup 2/增加到1100 A/cm/sup 2/，对于p沟道IGBT，闭锁极限从1200 A/cm/sup 2/增加到2100 A/cm/sup 2/。虽然p沟道IGBT的动态雪崩极限没有改善，但n沟道IGBT的动态雪崩极限有了显著的改善，使其FBSOA比传统的IGBT宽得多。在电流密度为200A/cm/sup~2/时，n沟道和p沟道IGBT的正向压降分别从1.7V增加到2.3V和-2.3V增加到-3.9V。
A new IGBT structure incorporating a shallow diverter between adjacent cells is proposed in this paper with the aim of widening the Forward Bias Safe Operating Area (FBSOA) of the IGBT. The latchup limit of the IGBT increased from 700 A/cm/sup 2/ to 1100 A/cm/sup 2/ in case of the n-channel IGBT and from 1200 A/cm/sup 2/ to 2100 A/cm/sup 2/ for the p-channel IGBT. Although there was a no improvement in the dynamic avalanche limit in the case of the p-channel IGBT, it improved significantly for the n-channel IGBT making its FBSOA much wider than that of the conventional IGBT. The incorporation of the diverter was found to result in an increase in the forward voltage drop (at a current density of 200 A/cm/sup 2/) from 1.7 V to 2.3 V and -2.3 V to -3.9 V for the n- and the p-channel IGBT, respectively.