High-power integrated stimulator output stages with floating discharge over a wide voltage range for nerve stimulation.
High-power integrated stimulator output stages with floating discharge over a wide voltage range for nerve stimulation.
复制标题
高功率集成刺激器输出级，在宽电压范围内具有浮动放电功能，用于神经刺激。
DOI：
10.1109/tbcas.2009.2034138
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发表时间：
2010
影响因子：
5.1
通讯作者：
Langlois PJ
中科院分区：
文献类型：
--
作者：
Langlois PJ
描述了两种集成神经刺激器电路。它们都能产生1到16 mA的被动电荷平衡两相刺激脉冲，宽度为10？S到1毫秒，电源宽度为6到24伏，用于植入书本电极。在两个电路中，在被动放电期间，电极漂浮在电源轨范围内的任何地方，可能高达24V。第一个电路仅用于刺激。它使用浮动耗尽晶体管来实现电极的持续放电，除非是在刺激时，而不需要使用电力。第二个电路还允许从相同的三极杆记录神经信号。它使用改进的浮动互补金属氧化物半导体(CMOS)放电开关，能够在其晶体管的栅极到源极电压限制之外的范围内工作。在录制过程中，在不通电的情况下长时间保持关闭状态。采用了0.6微米的绝缘体上硅CMOS工艺。使用生理盐水中的多个三极子对电路的测量性能进行了验证。
Two integrated nerve stimulator circuits are described. Both generate passively charge-balanced biphasic stimulating pulses of 1 to 16 mA with 10-¿s to 1-ms widths from 6- to 24-V supplies for implanted book electrodes. In both circuits, the electrodes are floating during the passive discharge anywhere within the range of the power rails, which may be up to 24 V. The first circuit is used for stimulation only. It uses a floating depletion transistor to enable continuous discharge of the electrodes, except when stimulating, without using power. The second circuit also allows neural signals to be recorded from the same tripole. It uses a modified floating complementary metal-oxide semiconductor (CMOS) discharge switch capable of operating over a range beyond the gate-to-source voltage limits of its transistors. It remains off for long periods using no power while recording. A 0.6-¿m silicon-on-insulator CMOS technology has been used. The measured performance of the circuits has been verified using multiple tripoles in saline.