Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A10.3Ga0.7As Schottky diodes
Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A10.3Ga0.7As Schottky diodes
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DOI：
10.1016/j.snb.2005.11.020
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发表时间：
2006-09-12
影响因子：
8.4
通讯作者：
Liu, Wen-Chau
中科院分区：
文献类型：
--
作者：
Huang, Jun-Rui;Hsu, Wei-Chou;Liu, Wen-Chau
系统地研究了Pd/GaN和Pd/Al_（0.3）Ga_（0.7）As肖特基二极管在宽氢浓度和温度范围内的氢敏特性。实验上，暴露于含氢气体后，所研究的肖特基型氢传感器可以在双极性施加电压下操作，这归因于随着氢浓度的增加正向和反向偏置电流的大幅增加。Pd/GaN肖特基二极管比Pd/Al0.3Ga0.7As肖特基二极管具有更高的工作温度和更大的肖特基势垒高度调制。根据范特霍夫方程，Pd/GaN和Pd/Al 0.3Ga 0.7As肖特基二极管的氢吸附热分别为-18.24和-10.36 kJ mol（-1）。实验上，Pd/Al_（0.3）Ga_（0.7）As和Pd/GaN肖特基二极管在较高温度（>= 400 K）下表现出较快的吸附和脱附响应。(c)2005 Elsevier B. V.保留所有权利。
The hydrogen sensing characteristics of Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. Experimentally, upon exposing to hydrogen-containing gases, both of the studied Schottky-type hydrogen sensors can be operated under bi-polarity applied voltages attributed to the substantial increases of forward- and reverse-biased currents with increasing the hydrogen concentration. The Pd/GaN Schottky diode can be operated under higher temperature with larger Schottky barrier height modulation than that of Pd/Al0.3Ga0.7As. According to the van't Hoff equation, the hydrogen adsorption heat values are -18.24 and -10.36 kJ mol(-1) for the Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes, respectively. Experimentally, the Pd/Al0.3Ga0.7As and Pd/GaN Schottky diodes manifest faster adsorption and desorption responses at higher temperature (>= 400 K). (c) 2005 Elsevier B.V. All rights reserved.