Depletion of surface accumulation charge in InN by anodic oxidation
Depletion of surface accumulation charge in InN by anodic oxidation
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通过阳极氧化耗尽 InN 中的表面积累电荷
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
E. Kohn
中科院分区：
文献类型：
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作者：
A. Denisenko;C. Pietzka;A. Chuvilin;U. Kaiser;H. Lu;W. Schaff;E. Kohn
Si掺杂InN层的分子束外延进行阳极氧化在0.1 M氢氧化钾（KOH）电解液和其特征在于通过电化学方法，以获得在InN表面的载流子分布。所得到的结果进行了比较，一个平面电阻器结构和垂直的金属氧化物半导体（MOS）二极管与镍金属接触氧化氮化铟的特性。在电解质和空气中的测量证实了阳极处理后的表面氧化层的形成和耗尽的生长InN的表面积累电荷。通过对MOS二极管电容-电压特性的分析，得出了InN在氧化层界面处的向上能带弯曲的结论。透射电子显微镜显示了一个不均匀的氧化物层，含有几个纳米直径的孔状结构。
Si-doped InN layer by molecular beam epitaxy was subjected to anodic oxidation in 0.1 M potassium hydroxide (KOH) electrolyte and characterized by electrochemical methods to derive carrier profile at the InN surface. The obtained results were compared to the characteristics of a planar resistor structure and vertical metal-oxide-semiconductor (MOS) diodes with Ni-metal contacts on the oxidized InN. Both measurements in electrolyte and in air confirmed the formation of a surface oxide layer after the anodic treatment and depletion of the surface accumulation charge of the as-grown InN. The upward band bending of InN at the oxide interface was also concluded from the analysis of capacitance-voltage characteristics of the MOS diodes. Transmission electron microscopy revealed a nonuniform oxide layer containing porelike structures of a few nanometers in diameter.