Interaction between magnetic domain walls and antiphase boundaries in Ni2Mn(Al,Ga) studied by electron holography and Lorentz microscopy
Interaction between magnetic domain walls and antiphase boundaries in Ni2Mn(Al,Ga) studied by electron holography and Lorentz microscopy
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DOI：
10.2320/matertrans.md200783
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发表时间：
2007-10
影响因子：
1.2
通讯作者：
T. Yano;Y. Murakami;R. Kainuma;D. Shindo
中科院分区：
文献类型：
--
作者：
T. Yano;Y. Murakami;R. Kainuma;D. Shindo
用电子全息术和洛伦兹显微术研究了铁磁形状记忆合金Ni2Mn（Al，Ga）L21相的磁化强度分布。该合金含有许多反相界（APB），这些反相界是通过从B2态到L21态的化学有序化引入的。在原位洛伦兹显微镜观察显示，APBs的行为作为强钉扎网站的畴壁运动。在APB的位置处形成的180°壁的宽度估计为约10nm。这种狭窄的畴壁是合理的抑郁症的铁磁性APBs。
The magnetization distribution in the L2 1 phase of a Ni 2 Mn(Al,Ga) alloy, which is a type of ferromagnetic shape memory alloy, has been studied by electron holography and Lorentz microscopy. This alloy contains many antiphase boundaries (APBs), which are introduced by the chemical ordering from the B2 state to the L2 1 state. In situ Lorentz microscopy observations have revealed that APBs behave as strong pinning sites for domain wall motion. The width of a 180° wall, which was formed at the position of an APB, was estimated to be approximately 10 nm. This narrow domain wall was rationalized by the depression of ferromagnetism within APBs.